Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2006-02-28
2008-05-27
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S393000, C257SE21008, C257SE21350, C029S832000
Reexamination Certificate
active
07378326
ABSTRACT:
A printed circuit board having embedded capacitors includes a double-sided copper-clad laminate including first circuit layers formed in the outer layers thereof, the first circuit layers including bottom electrodes and circuit patterns; dielectric layers formed by depositing alumina films on the first circuit layers by atomic layer deposition; second circuit layers formed on the dielectric layers and including top electrodes and circuit patterns; one-sided copper-clad laminates formed on the second circuit layers; blind via-holes and through-holes formed in predetermined portions of the one-sided copper-clad laminates; and plating layers formed in the blind via-holes and the through-holes. The manufacturing method of the printed circuit board is also disclosed.
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Ahn Jin Yong
Cho Suk Hyeon
Hwang Cheol Seong
Jeon Ho Sik
Kim Sung Kun
Darby & Darby P.C.
Samsung Electro-Mechanics Co. Ltd.
Tran Long K
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