Preparation of halftone phase shift mask blank

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07425390

ABSTRACT:
In preparing a halftone phase shift mask blank, a metal and silicon-containing compound film serving as a halftone phase shift film is formed on a transparent substrate by a co-sputtering process including the steps of disposing a metal-containing target and a silicon target in a chamber, feeding sputtering gases into the chamber, and applying electric powers across both the targets at the same time. The sputtered region area of the metal-containing target is smaller than the sputtered region area of the silicon target.

REFERENCES:
patent: 5667919 (1997-09-01), Tu et al.
patent: 6036825 (2000-03-01), Umetsu et al.
patent: 6653027 (2003-11-01), Angelopoulos et al.
patent: 7-140635 (1995-06-01), None

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