Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1992-08-05
1994-07-12
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257 23, 257 26, 257197, 257575, H01L 2972, H01L 29205
Patent
active
053291450
ABSTRACT:
There is disclosed a heterojunction bipolar transistor (HBT) which operates as either the emitter top mode performance or the collector top mode performance and also operates for low power dissipation due to lower ON voltages. A high gain, ultra-high speed semiconductor device is also disposed which includes a collector top type pnp HBT as a switching transistor and a lateral npn bipolar transistor as a current injection source, together with an integration method thereof which meets high density requirement with simple processes. The HBT is implemented with an InP substrate and a collector or emitter layer of p type In.sub.x Al.sub.1-x As lattice matched at least to the InP substrate, a base layer of n type In.sub.x Ga.sub.1-x As, a first spacer layer interposed between the base and collector and a second spacer layer between the base and emitter, both the spacer layers being made of p type In.sub.x Ga.sub.1-x As wherein by introducing of material which serves as an n impurity, the external base region is formed by the n type In.sub.x Ga.sub.1-x As and the resulting n type In.sub.x Al.sub.1-x As. There is further provided an I.sup.2 L circuit which comprises a HBT collector layer and a HBT emitter layer both of p type In.sub.x Al.sub.1-x As lattice matched to an InP substrate and a HBT base layer of n type In.sub.x Ga.sub.1-x As. By introduction of an n type impurity a HBT external base region is formed by the n type In.sub.x Ga.sub.1-x As and the resulting n type In.sub.x Al.sub.1-x As, together with a BT collector region and a BT emitter region of n type In.sub.x Al.sub.1-x As, wherein the BT base is common to the HBT collector and connected to a contact layer of p type In.sub.x Ga.sub.1-x As.
REFERENCES:
Jalali et al, Appl. Phys. Lett (23) 5 Jun. 1989 "Near-Ideal . . . Epitaxy" pp. 2333-2335.
Kyano et al. IEDM 1990 "High Gain in Transistors" pp. 28.3.1-28.3.4.
Jackson Jerome
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Heterojunction bipolar transistor and its integration method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heterojunction bipolar transistor and its integration method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor and its integration method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-398682