ESD protection circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

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Details

257357, 257362, H01L 2978, H01L 2702

Patent

active

053291433

ABSTRACT:
An ESD protection circuit and structure for integrated circuit devices uses a lateral NPN transistor to provide a low resistance discharge path for ESD transient voltages. A preferred structure also includes a modification to an N-channel output drive transistor to eliminate the parasitic bipolar transistor that induces snapback.

REFERENCES:
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patent: 4720737 (1988-01-01), Shirato
patent: 4733285 (1988-03-01), Ishioka et al.
patent: 4760433 (1988-07-01), Young et al.
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 5014105 (1991-05-01), Hata et al.
patent: 5017985 (1991-05-01), Lin
patent: 5072271 (1991-12-01), Shimizu et al.
RCA Technical Notes, Jul. 25, 1979, Princeton, N.J. Improved COS/MOS Inverter Circuit for Reducing Burn-Out and Latch-up, A. G. F. Dingwall.

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