Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-09-30
1994-07-12
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 51, 257 64, 257 65, 257347, 257387, 257507, H01L 4500, H01L 2900
Patent
active
053291409
ABSTRACT:
A thin film transistor having a larger ON-OFF current ratio is provided, in which a first insulating film having a first and second contact holes is formed on a substrate so as to cover a source and drain regions formed therein and a semiconductor film is formed on the first insulating film so as to be connected through the holes respectively to the source and drain regions. A second insulating film is formed on the semiconductor film and a gate electrode is formed thereon so as not be overlapped with the holes. In the offset region between each end of the gate electrode and the corresponding one of the holes, the insulation between the semiconductor film and the source and drain regions is provided by the first insulating film. This semiconductor film is weakly inverted by a drain voltage in the offset region, resulting in obtaining a leak current suppression action. The semiconductor film is preferable to be a polysilicon film.
REFERENCES:
patent: 4630089 (1986-12-01), Sasaki et al.
"SID 91 Digest", pp. 539 to 542, 1991.
NEC Corporation
Wojciechowicz Edward
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