Method for manufacturing a semiconductor device, as well as...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C257S506000

Reexamination Certificate

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07422955

ABSTRACT:
A method for manufacturing a semiconductor device, includes: forming a recognition mark that defines a well-forming region for forming a well on a semiconductor substrate; forming a mask, using the recognition mark, that is patterned so that the well-forming region is opened; introducing an impurity into the well-forming region; performing heat treatment for forming a well by diffusing the impurity; and forming an element isolation region on the semiconductor substrate.

REFERENCES:
patent: 6495896 (2002-12-01), Yaegashi et al.
patent: 6790781 (2004-09-01), Trivedi
patent: 6798038 (2004-09-01), Sato et al.
patent: 2004/0195632 (2004-10-01), Sato
patent: 2004-260073 (2004-09-01), None

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