Methods for making wafers with low-defect surfaces, wafers...

Details Methods for making wafers with low-defect surfaces, wafers... Methods for making wafers with low-defect surfaces, wafers...

2005-03-01

2008-05-06

Ackun, Jr., Jacob K. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

C438S478000, C451S041000

Reexamination Certificate

active

07367865

ABSTRACT:
The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm2, preferably less than 100 pit/cm2. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cm2and moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.

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