Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-01-25
2008-05-06
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603110, C029S603140, C257S295000, C257S421000, C257S422000, C257S423000, C360S324100, C360S324110, C360S324120, C360S324200, C428S692100, C438S003000
Reexamination Certificate
active
07367111
ABSTRACT:
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
REFERENCES:
patent: 5729410 (1998-03-01), Fontana et al.
patent: 6480365 (2002-11-01), Gill et al.
patent: 6639766 (2003-10-01), Nobuyuki et al.
Fontana, Jr. Robert E.
Lille Jeffrey S.
Bracewell & Giuliani LLP
Hitachi Global Storage Technologies Netherland BV
Kim Paul D.
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