Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-02-09

2008-09-02

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S046010

Reexamination Certificate

active

07421000

ABSTRACT:
A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index nsfor laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.

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Casey, H.C. Jr. et al. Eds. (1978).Heterostructure Lasers: Part A Fundamental PrinciplesAcademic Press pp. 42-49.

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