Amplifiers – With semiconductor amplifying device – Including protection means
Reexamination Certificate
2007-04-30
2008-09-09
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including protection means
Reexamination Certificate
active
07423491
ABSTRACT:
A first power source11for supplying a bias voltage to a gate electrode G of a field effect transistor13, which amplifies high-frequency signals, and a second power source15for supplying a bias voltage to a drain electrode D of the field effect transistor13are provided. The protective resistance12is connected between the gate electrode G of the field effect transistor13and the first power source11, and the bias voltage controller14is connected between the drain electrode D of the field effect transistor13and the second power source11. Further, a voltage detector16is connected between both ends of the protective resistance12to detect a voltage drop generated between both ends of the protective resistance12, when a rectified current flows to the gate electrode G from the drain electrode D of the field effect transistor13.
REFERENCES:
patent: 4427951 (1984-01-01), Amada et al.
patent: 5357089 (1994-10-01), Prentice
patent: 2005/0140452 (2005-06-01), Nagata
patent: 0 926 815 (1999-06-01), None
patent: 57-3405 (1982-01-01), None
patent: 2004-186735 (2004-07-01), None
Kabushiki Kaisha Toshiba
Nguyen Hieu P
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pascal Robert
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