Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2005-07-21
2008-03-04
Mai, Anh D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S064000, C257S191000, C257S200000, C257S615000, C257S627000, C257SE21126, C257SE29003, C257SE33025
Reexamination Certificate
active
07339255
ABSTRACT:
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1−100> direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards <11−20> direction lying in a range of 0.00 degree to 0.06 degree.
REFERENCES:
patent: 5742628 (1998-04-01), Fujii
patent: 6144045 (2000-11-01), Bandic et al.
patent: 6420198 (2002-07-01), Kimura et al.
patent: 6734530 (2004-05-01), Ban
patent: 2002/0113249 (2002-08-01), Hori et al.
patent: 2003/0001238 (2003-01-01), Ban
patent: 1347581 (2002-05-01), None
patent: 11-191657 (1999-07-01), None
patent: 2000223743 (2000-08-01), None
patent: 2003-60318 (2003-02-01), None
patent: 2003-238297 (2003-08-01), None
patent: 2004-327655 (2004-11-01), None
patent: 2004327655 (2004-11-01), None
Shuji Nakamura, et al., “Continuous-wave operation of InGaN/GaN/AIGaN-based laser diodes grown on GaN substrates”, Applied Physics Letters, vol. 72, No. 16, Apr. 20, 1998, pp. 2014-2016.
Hongo Chie
Nunoue Shin-ya
Onomura Masaaki
Tachibana Koichi
Kabushiki Kaisha Toshiba
Mai Anh D.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Roland Christopher M
LandOfFree
Semiconductor device having bidirectionally inclined toward... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having bidirectionally inclined toward..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having bidirectionally inclined toward... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3977150