Process for transferring a layer of strained semiconductor...

Details Process for transferring a layer of strained semiconductor... Process for transferring a layer of strained semiconductor...

2005-06-24

2008-03-04

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21458

Reexamination Certificate

active

07338883

ABSTRACT:
The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.

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