Nitride-based compound semiconductor light emitting device

Details Nitride-based compound semiconductor light emitting device Nitride-based compound semiconductor light emitting device

2005-08-30

2008-03-25

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S099000

Reexamination Certificate

active

07348601

ABSTRACT:
A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also has a nitride-based compound semiconductor layer provided on the second ohmic electrode. A surface of the second ohmic electrode is exposed.

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