Position based erase verification levels in a flash memory...

Details Position based erase verification levels in a flash memory... Position based erase verification levels in a flash memory...

2006-05-03

2008-03-18

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S185300, C365S185240, C365S185180

Reexamination Certificate

active

07345922

ABSTRACT:
The location of a cell to be erase verified is determined. The erase verification threshold voltage is then set. The threshold voltage is changed in response to the cell's location with respect to array ground. A cell in the middle of a row of cells between array grounds is verified to a lower voltage than a cell that is closer to an array ground.

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