Method of fabricating solid state imaging device including...

Details Method of fabricating solid state imaging device including... Method of fabricating solid state imaging device including...

2005-04-08

2008-03-25

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S098000, C438S712000, C257SE21278

Reexamination Certificate

active

07348204

ABSTRACT:
A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method including formation of the charge transfer electrodes, wherein the formation of the charge transfer electrodes comprises the steps of: forming a conductive film on a surface of a semiconductor substrate having formed thereon a gate oxide film; forming a mask pattern on the conductive film; forming interelectrode spacings in the conductive film using the mask pattern as a mask to make a patterned conductive film; and forming an insulating film to fill in the interelectrode spacings by vacuum chemical vapor deposition.

REFERENCES:
patent: 5915204 (1999-06-01), Sumi
patent: 2002/0014967 (2002-02-01), Crane et al.
patent: 2001-352049 (2001-12-01), None
Toyoshima et al., “0.1 mm Level Contact Hole Pattern Formation with KrF Lithography by Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS)”, International Electron Devices Meeting 1998. Technical Digest, 1998, p. 333-6.
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 192-194.

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