Semiconductor substrate, semiconductor device, method for...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S751000, C438S494000, C257SE21214

Reexamination Certificate

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07344997

ABSTRACT:
A semiconductor substrate comprising a semiconductor base, a dielectric layer formed in at least a part of an area on the semiconductor base, and a single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth.

REFERENCES:
patent: 5114876 (1992-05-01), Weiner
patent: 07-225410 (1995-08-01), None
patent: 2003-158091 (2003-05-01), None

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