Semiconductor device

Details Semiconductor device Semiconductor device

2004-10-28

2008-03-04

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S401000, C257S459000, C257S620000, C257S700000, C257S758000, C257S774000

Reexamination Certificate

active

07339256

ABSTRACT:
A semiconductor device includes a first insulating layer provided above a semiconductor substrate. The first insulating layer includes a layer consisting essentially of a material having a relative dielectric constant smaller than 3. The first insulating layer includes a first integral structure consisting of a plug and wiring. The upper surface of the wiring is flush with the upper surface of the first insulating layer, and the lower surface of the plug is flush with the lower surface of the first insulating layer. A region protective member is formed of a second integral structure consisting of a plug and wiring. The second integral structure extends from the upper surface of the first insulating layer to the lower surface of the first insulating layer. The region protective member surrounds one of first to n-th regions (n being a natural 2 or more) partitioned by a boundary region on a horizontal plane.

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K. Higashi, et al., “Temperature dependence of wire-wire capacitance in damascene structure with low-k dielectrics”, Extended Abstracts (The 47thSpring Meeting, 2000): The Japan Society of Applied Physics and Related Societies, No. 2, Mar. 28, 2000, p. 851.

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