Semiconductor light emitting element with p-type non-alloy elect

Details Semiconductor light emitting element with p-type non-alloy elect Semiconductor light emitting element with p-type non-alloy elect

1996-08-01

1998-08-11

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 257757, 257766, 257 99, 257768, 257769, H01S 319, H01L 2348, H01L 3300

Patent

active

057937885

ABSTRACT:
A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.

REFERENCES:
patent: 5029175 (1991-07-01), Ohnaka et al.
patent: 5511088 (1996-04-01), Loualiche et al.
Nakamura et al, "Candela-Class High-Brightness InGaN/AIGaN Double-Hetero Blue-Light-Emitting Diodes", Applied Physics Letters, vol. 64, No. 13., pp. 1687-1689, Mar. 1994.
Neamen, Semiconductor Physics and Devices: Basic Principles, Richard D. Irwin, Inc: Homewood, Il, (no month available) 1992, pp. 345-350.
A. Terano et al., The Extended Abstracts (The Spring Meeting, 1995 ): The Japan Society of Applied Physics and Related Societies, 31a-ZN-3, 1995; "Thermally Stable Ohmic Contacts using Pt for p-Type InGaAs" with partial English translation (no month).
M. Ishino et al., The Proceedings of the 1990 Autumn National Convention of the Institute of Electronics, Information and Communication Engineers of Japan, C-95, 1990; "1.3.mu.m MQW-DFB laser fabricated by LPE" with partial English translation (no month).
K. Endo et al., The Extended Abstracts (The Autumn Meeting, 1981); The Japan Society of Applied Physics and Related Societies, 9A-K-4, 1981; "Relationship between Generation of <110>DLD and thickness of a 4-element cap layer in an InGaAsP/InP-DH laser" with partial English translation (no month available).

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