Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-04-28
2008-03-25
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S052000, C257S058000, C257S059000, C257S060000, C257S061000, C257S063000, C257S066000, C257S067000, C257S068000, C257S069000, C257S070000, C257S071000, C257S072000, C257S073000, C257SE29151
Reexamination Certificate
active
07348598
ABSTRACT:
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode formed on a substrate; and source and drain electrodes obtained by sequentially forming a gate insulating film, an intrinsic amorphous silicon layer, and an n+ amorphous silicon layer on the gate electrode, wherein the source and drain electrodes have circular shapes. One of the source and drain electrodes is disposed at the center, and the other one of the source and drain electrodes having a concentric circular shape surrounds the former. A channel region may be formed between the source and drain electrodes; and an area of an effective stray capacitance may be less than 150 μm2. A ratio of a width of a channel to a length of the channel may be more than 4.5 and a filling capacity index to the effective stray capacitance may be less than 50.
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LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Soward Ida M.
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