Semiconductor device and method for manufacturing the same

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S244000, C257SE21208

Reexamination Certificate

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07405133

ABSTRACT:
A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.

REFERENCES:
patent: 5198384 (1993-03-01), Dennison
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5397908 (1995-03-01), Dennison et al.
patent: 5416042 (1995-05-01), Beach et al.
patent: 5442585 (1995-08-01), Eguchi et al.
patent: 5693553 (1997-12-01), Kashihara et al.
patent: 5717236 (1998-02-01), Shinkawata
patent: 5789303 (1998-08-01), Leung et al.
patent: 5828092 (1998-10-01), Tempel
patent: 6051859 (2000-04-01), Hosotani et al.
patent: 6204172 (2001-03-01), Marsh
patent: 6211542 (2001-04-01), Eastep et al.
patent: 6303958 (2001-10-01), Kanaya et al.
patent: 44 02 216 (1994-07-01), None
patent: 448307 (1991-09-01), None
patent: 7-115140 (1995-05-01), None
patent: 8-83894 (1996-03-01), None
patent: 8-264719 (1996-10-01), None
patent: 8-316430 (1996-11-01), None
patent: 9-135007 (1997-05-01), None
patent: 9-162311 (1997-06-01), None
patent: 9-162369 (1997-06-01), None
patent: 10-79478 (1998-03-01), None
patent: 10-209391 (1998-08-01), None
patent: 10-340871 (1998-12-01), None
patent: 11-31682 (1999-02-01), None
patent: 11-40768 (1999-02-01), None
patent: 2000-31396 (2000-01-01), None
patent: 2000-260956 (2000-09-01), None
patent: 1999-013932 (1999-02-01), None
Notification of Reasons for Rejection, mailed Oct. 5, 2004, by the Japanese Patent Office, for Japanese Application No. 11-187018, and English-language translation thereof.
Decision of Rejection issued by Japanese Patent Office, mailed Feb. 1, 2005, in Japanese application No. 11-187018, and English translation of Notice.
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Jul. 26, 2005 in counterpart Japanese Application No. 11-187018.
German Patent Office Action mailed by the German Patent Office on Aug. 4, 2005 in counterpart German Application No. 100 31 881.9-33.
German Patent Office Action mailed by the German Patent Office on Aug. 4, 2005 in counterpart German Application No. 100 66 244.7-33.
German Patent Office Action mailed by the German Patent Office on Jun. 26, 2007 in counterpart German Application No. 100 66 334.6-33.

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