Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-01-24
2008-03-11
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000
Reexamination Certificate
active
07341923
ABSTRACT:
A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.
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Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Nguyen Tuan H.
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