Method and apparatus for measuring thickness of thin film...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C438S015000, C438S016000, C702S097000, C702S170000

Reexamination Certificate

active

07427520

ABSTRACT:
A memory (43) of a control unit (4) stores correction data (81) indicating a relationship between a decrement in a measurement value of a film thickness by removal of organic contamination adsorbed onto a substrate and an amount of adsorbed organic contamination corresponding to a difference between a true film thickness and the measurement. The difference is caused by organic contamination adsorbed onto the substrate before removal of organic contamination. In a film-thickness measuring apparatus (1), a calculating/measuring part41obtains a first measurement value of a film thickness on a substrate (9) using an ellipsometer (23), and further obtains a second measurement value which is affected by remaining organic contamination after organic contamination adsorbed onto the substrate (9) is removed by an organic contamination remover (3). A film-thickness calculator (42) obtains an amount of adsorbed organic contamination before removal of organic contamination based on the first and second measurement values and the correction data (81). A thickness of the thin film formed on the substrate (9) is accurately obtained based on the first measurement value and the amount of adsorbed organic contamination before removal of organic contamination.

REFERENCES:
patent: 6146541 (2000-11-01), Goldstein et al.
patent: 6261853 (2001-07-01), Howell et al.
patent: 6303397 (2001-10-01), Chen et al.
patent: 6325078 (2001-12-01), Kamieniecki
patent: 6519045 (2003-02-01), Kwon
patent: 2002/0102748 (2002-08-01), Kwon
patent: 2003/0160972 (2003-08-01), Chen et al.
patent: 11-297689 (1999-10-01), None
patent: 2002-93871 (2002-03-01), None

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