Magnetoresistive sensor having an in stack bias structure...

Details Magnetoresistive sensor having an in stack bias structure... Magnetoresistive sensor having an in stack bias structure...

2005-07-22

2008-07-08

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07397638

ABSTRACT:
A magnetoresistive sensor having an in stack bias structure for biasing the magnetic moment of the free layer. The in stack bias structure includes a magnetic bias layer that may include a layer of NiFe and a layer of CoFe. A layer of antiferromagnetic material (AFM layer) is exchange coupled with the bias layer. Preferably, the NiFe layer of the bias layer is located adjacent to the AFM layer. A non-magnetic spacer layer is sandwiched between the free layer and the bias layer. The spacer layer comprises NiFeCr and is of such a thickness that magnetostatic coupling between the free layer and the bias layer across the spacer layer biases the magnetic moment of the free layer in a direction antiparallel to the magnetic moment of the bias layer. The NiFeCr promotes a desired crystalline growth in the bias layer that causes excellent exchange coupling between the bias layer and the AFM layer.

REFERENCES:
patent: 5731936 (1998-03-01), Lee et al.
patent: 6023395 (2000-02-01), Dill et al.
patent: 6114719 (2000-09-01), Dill et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6195239 (2001-02-01), Araki et al.
patent: 6222707 (2001-04-01), Huai et al.
patent: 6438026 (2002-08-01), Gillies et al.
patent: 6466419 (2002-10-01), Mao
patent: 6556392 (2003-04-01), Mao et al.
patent: 6700760 (2004-03-01), Mao
patent: 7075760 (2006-07-01), Gill
patent: 7106561 (2006-09-01), Carey et al.
patent: 7162791 (2007-01-01), Ju et al.
patent: 7224556 (2007-05-01), Pinarbasi
patent: 7259942 (2007-08-01), Childress et al.
patent: 7265947 (2007-09-01), Zheng et al.
patent: 7283336 (2007-10-01), Gill
patent: 2003/0156362 (2003-08-01), Gill
patent: 2005/0024793 (2005-02-01), Nakabayashi et al.
patent: 2006/0002042 (2006-01-01), Gill
patent: 2007/0109692 (2007-05-01), Carey et al.
Michael K. Ho, Ching Tsang, Jeff Childress, Robert Fontana, Jordan Katine, an Kashmira Carey, “Study of Longitudinal Stabilizations Using In-Stack Biasing,” Jan. 2004, IEEE Transactions on Magnetics, vol. 40, No. 1.
K.M.H. Lenssen, C. Giebeler, and A.E.T. Kuiper, “Improving Magnetoresistance Characteristics by Toppings,” Jul. 2001, IEEE Transactions on Magnetics, vol. 37, No. 4.
Y. Hamakawa, M. Komuro, K. Watanabe, H. Hoshiya, T. Okada, K. Nakamoto, Y. Suzuki, F. Fuyama, and H. Fukui, “Spin-Valve Heads Using CrMnPt Antiferromagnetic Films,” Mar. 1999, IEEE Transactions on Magnetics, vol. 35, No. 2.
M. Hatatani, K. Hoshino, H. Hoshiya, T. Shintani, K. Watanabe, K. Nakamoto, H. Tanaka and H. Ide, Read Performance of GMR Heads with In-Stack Longitudinal Bias Layer, May, 2003, Journal of Applied Physics, vol. 93, No. 10.
M.J. Carey, A. Kellock, L. Baril, J.R. Childress, T. Le, T. Thompson, and B.A. Gurney, “Improved Corrosion Resistance of IrMn by Cr and Ru Additions,” Dec. 2002, Applied Physics Letters, vol. 81, No. 27.

Affiliated with

Also associated with

Rating

Magnetoresistive sensor having an in stack bias structure... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive sensor having an in stack bias structure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor having an in stack bias structure... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3966372