Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-06-20
2008-03-04
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S012000, C257S020000, C257SE21395, C257SE21399
Reexamination Certificate
active
07339207
ABSTRACT:
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
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Hirose Yutaka
Ikeda Yoshito
Inoue Kaoru
Murata Tomohiro
Tanaka Tsuyoshi
Lee Eugene
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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