Methods for erasing and programming memory devices

Details Methods for erasing and programming memory devices Methods for erasing and programming memory devices

2006-04-05

2008-07-01

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185330, C365S185240, C365S218000

Reexamination Certificate

active

07394702

ABSTRACT:
A dual-bit memory device includes a first charge storage region spaced apart from a second charge storage region by an isolation region. Techniques for erasing a memory can be provided in which electrons can be injected into the charge storage regions to erase the charge storage regions. Other techniques for programming a memory can be provided in which holes can be injected into at least one of the charge storage regions to program the charge storage regions.

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PCT Written Opinion for PCT/US07/08683, Dec. 7, 2007, Spansion LLC.

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