Method for fabricating ferroelectric capacitive element and...

Details Method for fabricating ferroelectric capacitive element and... Method for fabricating ferroelectric capacitive element and...

2005-03-17

2008-03-04

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000

Reexamination Certificate

active

07338814

ABSTRACT:
A method for fabricating a ferroelectric capacitive element of this invention includes the steps of forming a lower electrode made of a first conductive film on a substrate; forming a first ferroelectric film including bismuth in a first concentration on the lower electrode; forming a second ferroelectric film including bismuth in a second concentration on the first ferroelectric film; performing annealing after forming the first ferroelectric film and the second ferroelectric film; and forming an upper electrode made of a second conductive film on the second ferroelectric film after the annealing. The first conductive film is a metal film more easily etched than a platinum film, and the second ferroelectric film is formed in such a manner that the second concentration is lower than the first concentration before the annealing.

REFERENCES:
patent: 5989927 (1999-11-01), Yamanobe
patent: 6417012 (2002-07-01), Kim et al.
patent: 7166884 (2007-01-01), Yano et al.
patent: 10-027888 (1998-01-01), None

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