Dummy fill for integrated circuits

Details Dummy fill for integrated circuits Dummy fill for integrated circuits

2002-06-07

2008-07-01

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S129000, C257S758000, C257SE21586

Reexamination Certificate

active

07393755

ABSTRACT:
A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to direct the insertion of dummy fill into an integrated circuit.

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