Thin film transistor array substrate and repairing method...

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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Details

C349S054000, C349S043000, C349S144000

Reexamination Certificate

active

07324183

ABSTRACT:
A thin film transistor array substrate and repairing methods thereof are disclosed. The thin film transistor array substrate comprises openings in each pixel electrode, each capacitor electrode and each common line. The openings of the capacitor electrode and the common line are located in the opening of the pixel electrode. The opening of the capacitor electrode exposes a portion area of the capacitor electrode and the common line. The pixel electrode is coupled to the common line through a connecting conductive layer. The MII storage capacitor Cst is formed by the pixel electrode and the capacitor electrode. When the MII storage capacitor Cst fails, the MII storage capacitor Cst can be switched to the MIM storage capacitor Cst by laser repairing.

REFERENCES:
patent: 6300996 (2001-10-01), Matsuyama et al.
patent: 7015548 (2006-03-01), Song et al.
patent: 7110056 (2006-09-01), Matsui et al.
patent: 7139043 (2006-11-01), Kwon et al.
patent: 2007/0159571 (2007-07-01), Yang

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