Complementary MOS field effect transistor integrated circuit wit

Details Complementary MOS field effect transistor integrated circuit wit Complementary MOS field effect transistor integrated circuit wit

1983-10-17

1986-08-19

Edlow, Martin H.

357 41, 357 13, H01L 2702, H01L 2990

Patent

active

046072748

ABSTRACT:
This invention provides a structure for preventing input part and/or an output part of the semiconductor chip forming complementary MOS field effect transistors from being damaged by accumulated static charges, wherein regions of the conductivity types as and higher impurity concentrations than a semiconductor substrate and a well region, respectively, are formed at the respective surfaces to come in contact with each other such that diodes be formed and the diodes are connected to an electrode pad.

REFERENCES:
patent: 4006491 (1977-02-01), Alaspa et al.

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