Pattern correcting method of mask for manufacturing a...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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C382S145000, C382S147000

Reexamination Certificate

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07315641

ABSTRACT:
A pattern correcting method of a mask for manufacturing a semiconductor device includes extracting a correction portion to be corrected from a mask pattern on the mask, obtaining a surrounding environment of the correction portion and giving a correction amount to the correction portion. The correction amount is variable. The variable correction amount is given to the correction portion in accordance with the surrounding environment of the correction portion.

REFERENCES:
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 6060368 (2000-05-01), Hashimoto et al.
patent: 9-292701 (1997-11-01), None
patent: 9-319067 (1997-12-01), None
patent: 11-174658 (1999-07-01), None

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