Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Reexamination Certificate
2005-08-24
2008-07-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
C257SE29298
Reexamination Certificate
active
07394111
ABSTRACT:
One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon substrate with a desired dose and energy to be located beneath a surface silicon layer in the substrate. The implantation of germanium ions at least partially amorphizes the surface silicon layer. The substrate is heat treated to regrow a crystalline silicon layer over a resulting silicon germanium layer using a solid phase epitaxial (SPE) process. The crystalline silicon layer is strained by a lattice mismatch between the silicon germanium layer and the crystalline silicon layer. Other aspects are provided herein.
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