Method of making metal oxide semiconductor field effect transist

Details Method of making metal oxide semiconductor field effect transist Method of making metal oxide semiconductor field effect transist

1993-04-22

1994-07-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 40, H01L 21265

Patent

active

053288629

ABSTRACT:
A method of making a MOSFET with a LDD structure capable of minimizing the junction capacitance and the number of manufacturing process.
The method comprises the steps of forming a field oxide on a P type substrate, forming a gate oxide on the active region, forming sidewall spacers with a nitride film at side surfaces of the gate,

REFERENCES:
patent: 4771014 (1988-09-01), Liou et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 5061649 (1991-10-01), Takenouchi et al.
patent: 5064774 (1991-11-01), Pfiester
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5102816 (1992-04-01), Manukonda et al.
patent: 5120673 (1992-06-01), Itoh
patent: 5122474 (1992-06-01), Harrington, III
patent: 5146292 (1992-09-01), Watanabe et al.
patent: 5200352 (1993-04-01), Pfiester
patent: 5219777 (1993-06-01), Kang

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