Method for producing the bipolar transistor

Details Method for producing the bipolar transistor Method for producing the bipolar transistor

1992-10-05

1994-07-12

Kunemund, Robert

Fishing, trapping, and vermin destroying

437154, 437164, 257552, H01L 21265, H01L 2970

Patent

active

053288580

ABSTRACT:
A silicon oxide film is formed at a surface of a silicon substrate of a first conductive type, and then patterned to have an opening. PSG is deposited on the silicon substrate having the insulating film thereon, and then etched to leave the PSG only on a side wall of the opening. An impurity is implanted to the silicon substrate through the opening, and then thermal treatment is effected.

REFERENCES:
patent: 3656034 (1972-04-01), Rideout
patent: 3665266 (1972-05-01), Drozdowicz et al.
patent: 3787253 (1974-01-01), Ashar
patent: 4125426 (1978-11-01), Inayoshi et al.
patent: 4375999 (1983-03-01), Nawata et al.
patent: 4404738 (1983-09-01), Sasaki et al.
patent: 5021860 (1991-06-01), Bertotti et al.

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