Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-07-13
2008-03-25
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C257SE21129, C257SE21568, C257SE21570
Reexamination Certificate
active
07348260
ABSTRACT:
A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.
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Estrada Michelle
S.O.I.Tec Silicon on Insulator Technologies
Stark Jarrett J
Winston & Strawn LLP
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