Method for manufacturing semiconductor substrate and...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S513000, C438S680000, C257SE21170, C257SE21320, C257SE21231, C257SE21248, C257SE21278, C257SE21293

Reexamination Certificate

active

10540720

ABSTRACT:
A semiconductor substrate (100) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a high temperature, forming a surface protection layer for blocking oxygen on the major surface, performing annealing, and then stripping off the mask and the surface protection layer. A silicon dioxide layer (102) has a first tip surface (102a) corresponding to an area where the mask has not existed and having a relatively long distance from the major surface (100a), and a second top surface (102b) corresponding to an area where the mask has existed and having a relatively short distance from the major surface (100a). As this major surface (100a) is polished by a predetermined quantity, a semiconductor substrate is provided in which only a part of a single-crystal silicon substrate is a SOI substrate.

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patent: 0 966 034 (1999-12-01), None
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patent: 2000-77352 (2000-03-01), None

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