Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-04-29

2008-04-29

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S763000, C257S754000, C257S764000, C438S643000, C438S648000

Reexamination Certificate

active

11027153

ABSTRACT:
Disclosed herein is a semiconductor device and method of manufacturing the same. A step between a memory cell formed in a cell region and a transistor formed in a peripheral circuit region is minimized, and the height of a gate in the memory cell is minimized. Accordingly, subsequent processes are facilitated and the electrical property of the device is thus improved.

REFERENCES:
patent: 6576543 (2003-06-01), Lin et al.
patent: 2003/0124838 (2003-07-01), Huang
patent: 2004/0009336 (2004-01-01), Marcadal et al.
patent: 2005/0020042 (2005-01-01), Heo et al.
patent: 2006/0043458 (2006-03-01), Rudeck
patent: 2003-273209 (2003-05-01), None
patent: 15-273209 (2003-09-01), None
Official action issued in corresponding Korean application No. 2004-84179 dated Apr. 18, 2006.

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