Producing reference voltages using transistors

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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C327S546000

Reexamination Certificate

active

11114642

ABSTRACT:
An exemplary circuit embodiment includes a depletion-mode transistor and an enhancement-mode transistor. The circuit also includes a circuit portion coupled to a gate region of the depletion-mode transistor and to a gate region of the enhancement-mode transistor. In this embodiment, the circuit portion is configured to provide a reference voltage at an output node, wherein the reference voltage is associated with a difference between a voltage at the gate region of the depletion-mode transistor and a voltage at the gate region of the enhancement-mode transistor.

REFERENCES:
patent: 4100437 (1978-07-01), Hoff, Jr.
patent: 4305011 (1981-12-01), Audaire et al.
patent: 4654578 (1987-03-01), Salerno et al.
patent: 5184061 (1993-02-01), Lee et al.
patent: 5422593 (1995-06-01), Fujihira
patent: 5448084 (1995-09-01), Hoke et al.
patent: 5701020 (1997-12-01), Liu et al.
patent: 5742148 (1998-04-01), Sudo et al.
patent: 5838192 (1998-11-01), Bowers et al.
patent: 5973550 (1999-10-01), Bowers et al.
patent: 6072203 (2000-06-01), Nozaki et al.
patent: 6521961 (2003-02-01), Costa et al.
patent: 6552603 (2003-04-01), Ueda
patent: 6787826 (2004-09-01), Tserng et al.
patent: 2002/0177261 (2002-11-01), Song
patent: 2005/0110054 (2005-05-01), Wohlmuth
Chen et al., “New Approach to CMOS Current Reference with Very Low Temperature Coefficient,”GLVSI'03, pp. 281-284 (2003).
“Field Effect Transistors in Theory and Practice,”Motorola Semiconductor Application Note, AN211A, pp. 1-12 (1993).
Jung et al., “References and Low Dropout Linear Regulators” Chapter 2, pp. 2.1-2.57, within Kester, W., Editor,Practical Design Techniques for Power and Thermal Management, Analog Devices, Inc. (1998).
Miller et al., “Precision voltage references,”Analog Applications Journal, pp. 1-4 (Nov. 1999).
Nasraty, “XFET™ References: Low noise, lower voltage than Zeners, Micropower, better than bandgaps,”Analog Dialogue, vol. 32, No. 1, 5 pp. (1998).
“TQPED: 0.5 μm E/D pHEMT Foundry Service,” TriQuint Semiconductor Advanced Information Process, pp. 1-2 (document marked Dec. 12, 2003).
“TriQuint Develops First Gallium Arsenide E-D pHEMT Foundry Process,” downloaded from http://www.embeddedstar.com/press/content/2003/12/embedded12025.html, 2 pp. (document marked Dec. 16, 2003).

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