Trench isolation type semiconductor device which prevents a...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S506000, C257S507000, C257SE21549, C438S427000, C438S425000, C438S424000, C438S443000

Reexamination Certificate

active

11301510

ABSTRACT:
A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type semiconductor device includes a semiconductor substrate defined by an active region and a field region, a trench formed in the field region, an oxide layer conformally formed along the inside of the trench, a liner layer conformally formed along the oxide layer, a field insulating layer formed inside the trench including the oxide layer and the liner layer, and a field protection layer formed on the field insulating layer so that a step difference does not occur on the semiconductor substrate.

REFERENCES:
patent: 6297126 (2001-10-01), Lim et al.
patent: 2001/0015046 (2001-08-01), Hong
patent: 10-0353832 (2002-09-01), None
patent: 10-2004-0004990 (2004-01-01), None
patent: 10-2004-0032531 (2004-04-01), None

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