Method and apparatus for sensing in charge trapping...

Details Method and apparatus for sensing in charge trapping... Method and apparatus for sensing in charge trapping...

2008-03-18

2008-03-18

Pham, Lý Duy (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185180, C365S185260, C365S185270

Reexamination Certificate

active

10973593

ABSTRACT:
A memory cell with a charge trapping structure is read by measuring current between the substrate region of the memory cell and one of the source region of the memory cell and the drain region of the memory cell. The read operation decreases the coupling between different parts of the charge trapping structure when other parts of the charge trapping structure store data that are not of interest. The sensing window of the memory cell can be greatly improved by this read operation.

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