Semiconductor structure that includes a cooling structure...

Details Semiconductor structure that includes a cooling structure... Semiconductor structure that includes a cooling structure...

2008-04-01

2008-04-01

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S713000, C257SE23082, C438S122000, C438S667000

Reexamination Certificate

active

11152225

ABSTRACT:
A semiconductor device has a semiconductor chip having first and second surfaces; a sealing resin formed over the first surface; and a cooling structure having a first conductive layer formed on the first surface, an n-type semiconductor formed on the first conductive layer and having one end thereof being exposed from the sealing resin, a p-type semiconductor formed on the first conductive layer and having one end thereof being exposed from the sealing resin, a second conductive layer contacting the exposed end of the n-type semiconductor, a third conductive layer contacting the exposed end of the p-type semiconductor, a first electrode pad integrally formed with the second conductive layer, a second electrode pad integrally formed with the third conductive layer, and spherical electrodes formed at the first and second electrode pads, respectively.

REFERENCES:
patent: 5874775 (1999-02-01), Shiomi et al.
patent: 6281120 (2001-08-01), Strnad
patent: 6627988 (2003-09-01), Andoh
patent: 6711904 (2004-03-01), Law et al.
patent: 2006/0097383 (2006-05-01), Ramanathan et al.
patent: 2003-17638 (2003-01-01), None

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