Efficient thyristor-type power switches

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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Details

C327S440000

Reexamination Certificate

active

11151508

ABSTRACT:
The highest-power switches now available are based on thyristor-type devices: GTOs (Gate turn-off thyristors), MTOs (MOS controlled turn-off thyristors), IGCTs (Integrated gate commutated thyristors), and the new ETOs (Emitter turn-off thyristors). These devices handle kilovolts and kiloamperes for megawatt inverters/converters. Measurements by the inventors show that conduction losses of MOSFETs and switching losses of IGCTs are drastically decreased by cryo-cooling. IGCTs, ETOs, and MTOs, together with many small, low voltage MOSFETs for gate and emitter turn-off circuitry, are cryo-cooled to attain much higher switching speeds and a reduction in size, weight and cost of high-power (megawatt range) equipment.

REFERENCES:
patent: 4581543 (1986-04-01), Herberg
patent: 4682278 (1987-07-01), Marquardt et al.
patent: 6163200 (2000-12-01), Iijima
patent: 6933541 (2005-08-01), Huang
patent: 2001/0043111 (2001-11-01), Gonthier et al.
patent: 2003/0168671 (2003-09-01), Huang et al.
patent: 57183269 (1982-11-01), None
patent: 06165371 (1994-06-01), None
patent: 08033311 (1996-02-01), None

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