Memory having storage locations within a common volume of...

Details Memory having storage locations within a common volume of... Memory having storage locations within a common volume of...

2008-03-18

2008-03-18

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S158000, C365S145000, C365S151000, C365S066000, C365S065000, C365S072000

Reexamination Certificate

active

11400742

ABSTRACT:
A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change material, and a second transistor coupled to the volume of phase change material for accessing a second storage location within the volume of phase change material.

REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 6504742 (2003-01-01), Tran et al.
patent: 6567296 (2003-05-01), Casagrande et al.
patent: 6737312 (2004-05-01), Moore
patent: 6744088 (2004-06-01), Dennison
patent: 6764894 (2004-07-01), Lowrey
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 6914255 (2005-07-01), Lowrey
patent: 6943395 (2005-09-01), Oh et al.
patent: 7009694 (2006-03-01), Hart et al.
patent: 7038261 (2006-05-01), Horii
patent: 7042749 (2006-05-01), Nejad et al.
patent: 7126149 (2006-10-01), Iwasaki et al.
patent: 7212432 (2007-05-01), Ferrant et al.
patent: 7223693 (2007-05-01), Choi et al.
patent: 2003/0001230 (2003-01-01), Lowrey
patent: 2004/0262635 (2004-12-01), Lee
patent: 2005/0112896 (2005-05-01), Hamann et al.
S.J. Ahn et al. , “Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM” VLSI 2005.
M. Gill et al., “Ovonics Unified Memory—A High Performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”, ISSCC, 2002.
E. Maayan et al., “A 512Mb NROM Data Storage Memory with 8MB/s data rate”, ISSCC, 2002.
B. Eitan et al., “Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?” ICSSDM, 1999 (3 pages).

Affiliated with

Also associated with

Rating

Memory having storage locations within a common volume of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory having storage locations within a common volume of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory having storage locations within a common volume of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3948106