Method of forming a BJT with ESD self protection

Details Method of forming a BJT with ESD self protection Method of forming a BJT with ESD self protection

2008-09-09

2008-09-09

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S508000, C438S335000, C438S327000, C438S370000, C438S372000, C257S565000, C257S557000, C257S558000, C257S273000

Reexamination Certificate

active

11799954

ABSTRACT:
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.

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