Semiconductor device including a multi-channel fin field...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21400, C257S347000, C257S354000, C257S401000

Reexamination Certificate

active

11033526

ABSTRACT:
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a portion of the semiconductor substrate in the cell region and in the peripheral circuit region including an isolation region defining an active region, a portion of the active region protruding above an upper surface of the isolation region to define at least two active channels, a gate dielectric layer formed over the active region of the semiconductor substrate including the at least two protruding active channels, a gate electrode formed over the gate dielectric layer and the isolation region of the semiconductor substrate, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.

REFERENCES:
patent: 5495439 (1996-02-01), Morihara
patent: 6391782 (2002-05-01), Yu
patent: 6413802 (2002-07-01), Hu et al.
patent: 6664582 (2003-12-01), Fried et al.
patent: 6762477 (2004-07-01), Kunikiyo
Merriam-Webster Online Dictionary www.m-w.com.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device including a multi-channel fin field... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including a multi-channel fin field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including a multi-channel fin field... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3945269

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.