Semiconductor device including a multi-channel fin field...

Details Semiconductor device including a multi-channel fin field... Semiconductor device including a multi-channel fin field...

2008-07-01

2008-07-01

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257SE21400, C257S347000, C257S354000, C257S401000

Reexamination Certificate

active

11033526

ABSTRACT:
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a portion of the semiconductor substrate in the cell region and in the peripheral circuit region including an isolation region defining an active region, a portion of the active region protruding above an upper surface of the isolation region to define at least two active channels, a gate dielectric layer formed over the active region of the semiconductor substrate including the at least two protruding active channels, a gate electrode formed over the gate dielectric layer and the isolation region of the semiconductor substrate, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.

REFERENCES:
patent: 5495439 (1996-02-01), Morihara
patent: 6391782 (2002-05-01), Yu
patent: 6413802 (2002-07-01), Hu et al.
patent: 6664582 (2003-12-01), Fried et al.
patent: 6762477 (2004-07-01), Kunikiyo
Merriam-Webster Online Dictionary www.m-w.com.

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