Monolithic white light emitting device having nitride...

Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type

Reexamination Certificate

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C313S501000, C257S013000

Reexamination Certificate

active

11081638

ABSTRACT:
A monolithic white light emitting device is provided, including an active layer and a passive layer that emits light with a long wavelength obtained by wavelength conversion. White light can be obtained by appropriately controlling lights emitted from the active layer and the passive layer. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

REFERENCES:
patent: 6277664 (2001-08-01), Lozykowski et al.
patent: 2004/0072383 (2004-04-01), Nagahama et al.
patent: 2004/0106222 (2004-06-01), Steckl et al.
patent: 2004/0232433 (2004-11-01), Doverspike et al.
patent: 2000-286445 (2000-10-01), None
Motokazu Yamada et al., “Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well”, Part 2, No. 3A, Mar. 1, 2002, pp. L246-L248, J. Appl. Phys. vol. 41 (2002), The Japan Society of Applied Physics, Tokushima, Japan.
Office Action dated Apr. 19, 2007 in corresponding Korean Patent Application.

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