Polishing method to reduce dishing of tungsten on a dielectric

Details Polishing method to reduce dishing of tungsten on a dielectric Polishing method to reduce dishing of tungsten on a dielectric

2008-01-08

2008-01-08

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S693000

Reexamination Certificate

active

11132315

ABSTRACT:
The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.

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“Mechanical Removal in CMP of Copper Using Alumina Abrasives” byLirong Guo et al, Jour of Electrochemical Society, 151 (2) G104-G108 (2004).

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