Compositions – Etching or brightening compositions
Reexamination Certificate
2008-07-15
2008-07-15
Tran, Binh X (Department: 1792)
Compositions
Etching or brightening compositions
C252S079200, C252S079300, C252S079400, C510S175000, C438S745000
Reexamination Certificate
active
10100319
ABSTRACT:
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.
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Tran Binh X
Whyte Hirschboeck Dudek SC
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