Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2008-05-13
2008-05-13
Tugbang, A. Dexter (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603010, C029S603070, C029S603130, C029S603140, C360S324120
Reexamination Certificate
active
10857168
ABSTRACT:
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
REFERENCES:
patent: 4264358 (1981-04-01), Johnson et al.
patent: 5546254 (1996-08-01), Gill
patent: 5581427 (1996-12-01), Feng et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5818685 (1998-10-01), Thayamballi et al.
patent: 5880912 (1999-03-01), Rottmayer
patent: 5974657 (1999-11-01), Fox et al.
patent: 6118622 (2000-09-01), Gill
patent: 6127053 (2000-10-01), Lin et al.
patent: 6219211 (2001-04-01), Gill
patent: 6249406 (2001-06-01), Gill et al.
patent: 6262869 (2001-07-01), Lin et al.
patent: 6333842 (2001-12-01), Nobuyuki et al.
patent: 6375761 (2002-04-01), Gambino et al.
patent: 6522134 (2003-02-01), Gill
patent: 2003/0179517 (2003-09-01), Horng et al.
patent: 2003/0184918 (2003-10-01), Lin et al.
patent: 2003/0184919 (2003-10-01), Lin et al.
patent: 2003/0231098 (2003-12-01), Wan
Gill, “Canted Contiguous Hard Bias Stabilization for Very Thin Magnetoresistive/Giant Magneto-Resistance Sensor” IBM Technical Disclosure Bulletin Jun. 1996 p. 130-104.
Gill Hardayal Singh
Li Jinshan
Mackay Kenneth Donald
Nishioka Kouichi
Tran Andy Cuong
Nguyen Tai Van
Zilka-Kotab, PC
LandOfFree
Method for resetting pinned layer magnetization in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for resetting pinned layer magnetization in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for resetting pinned layer magnetization in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3943785