Protection of output stage transistor of an RF power amplifier

Amplifiers – With control of power supply or bias voltage – With control of input electrode or gain control electrode bias

Reexamination Certificate

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C330S279000

Reexamination Certificate

active

11361238

ABSTRACT:
A protection method may prevent a load-mismatch-induced failure in solid-state power amplifiers. In an RF power amplifier, the load voltage standing-wave ratio results in very high voltage peaks at the collector of the final stage and may eventually lead to permanent failure of the power transistor due to avalanche breakdown. The method avoids breakdown by attenuating the input power to the final stage during overvoltage conditions, thus limiting the output collector swing. This is accomplished by a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. Indeed, the control loop is unlocked in the nominal condition and it acts when an output mismatching condition is detected. A control circuit also allows a supply-independent collector-clamping threshold to be accurately set.

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patent: 2002/0125945 (2002-09-01), Taylor
patent: 02/065634 (2002-08-01), None
Scuderi et al., Institute of Electrical and Electronics Engineers, A High Performance RF Power Amplifier with Protection Against Load Mismatches, 2003 IEEE MTT-S International Microwave Symposium Digest, vol. 3 of 3, Jun. 8, 2003, pp. 699-702.

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