Heteroatom-containing diamondoid transistors

Details Heteroatom-containing diamondoid transistors Heteroatom-containing diamondoid transistors

2008-07-22

2008-07-22

Elms, Richard T. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51001

Reexamination Certificate

active

10622046

ABSTRACT:
These heterodiamondoids are diamondoids that include heteroatoms in the diamond lattice structure. The heteroatoms may be either electron donating, such that an n-type heterodiamondoid is created, or electron withdrawing, such that a p-type heterodiamondoid is made. Bulk materials may be fabricated from these heterodiamondoids, and the techniques involved include chemical vapor deposition, polymerization, and crystal aggregation. Junctions may be made from the p-type and n-type heterodiamondoid based materials, and microelectronic devices may be made that utilize these junctions. The devices include diodes, bipolar junction transistors, and field effect transistors.

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